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IPW60R080P7XKSA1 vs. STW48N60M2

What's the Difference?

The IPW60R080P7XKSA1 and STW48N60M2 are both power MOSFET transistors designed for high power applications. The IPW60R080P7XKSA1 has a lower on-state resistance of 0.08 ohms compared to the STW48N60M2 which has an on-state resistance of 0.12 ohms. This means that the IPW60R080P7XKSA1 will have lower power dissipation and higher efficiency. However, the STW48N60M2 has a higher maximum drain-source voltage of 600V compared to the IPW60R080P7XKSA1 which has a maximum voltage of 800V. Overall, both transistors have their own strengths and weaknesses depending on the specific requirements of the application.

Comparison

AttributeIPW60R080P7XKSA1STW48N60M2
ManufacturerInfineonSTMicroelectronics
Part NumberIPW60R080P7XKSA1STW48N60M2
PackageTO-247TO-247
Power Dissipation60W48W
Voltage Rating600V600V

Further Detail

Introduction

When it comes to selecting the right power MOSFET for your application, it's important to consider various attributes such as voltage rating, current rating, on-state resistance, and switching speed. In this article, we will compare two popular power MOSFETs - IPW60R080P7XKSA1 and STW48N60M2 - to help you make an informed decision.

Voltage Rating

The IPW60R080P7XKSA1 has a voltage rating of 800V, making it suitable for high voltage applications. On the other hand, the STW48N60M2 has a slightly lower voltage rating of 600V. If your application requires a higher voltage tolerance, the IPW60R080P7XKSA1 would be the better choice.

Current Rating

Both the IPW60R080P7XKSA1 and STW48N60M2 have a current rating of 60A, which is sufficient for many power applications. However, if you need to handle higher currents, you may want to consider other MOSFET options with a higher current rating.

On-State Resistance

The on-state resistance of a MOSFET is a crucial parameter that affects power dissipation and efficiency. The IPW60R080P7XKSA1 has an on-state resistance of 0.08 ohms, while the STW48N60M2 has a slightly higher on-state resistance of 0.1 ohms. If low on-state resistance is a priority for your application, the IPW60R080P7XKSA1 would be the better choice.

Switching Speed

Switching speed is another important factor to consider when selecting a power MOSFET. The IPW60R080P7XKSA1 has a fast switching speed, making it suitable for applications that require rapid switching. On the other hand, the STW48N60M2 has a slower switching speed, which may be more suitable for applications where switching speed is not a critical factor.

Thermal Performance

Thermal performance is crucial for power MOSFETs, as they can generate a significant amount of heat during operation. The IPW60R080P7XKSA1 has a lower thermal resistance compared to the STW48N60M2, which means it can dissipate heat more efficiently. If thermal management is a concern for your application, the IPW60R080P7XKSA1 would be a better choice.

Conclusion

In conclusion, both the IPW60R080P7XKSA1 and STW48N60M2 are high-quality power MOSFETs with their own set of attributes. The IPW60R080P7XKSA1 excels in voltage rating, on-state resistance, and thermal performance, while the STW48N60M2 may be more suitable for applications where switching speed is not a critical factor. Ultimately, the best choice will depend on the specific requirements of your application.

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